Electrical and physical characterization of ultrathin Silicon Oxynitride gate dielectric films formed by the Jet Vapor Deposition technique

Materials Research Society Symposium - Proceedings

Volumn 592, Issue , 2000, Pages 307-315

  Karamcheti, A ^a   Watt, V H C ^a   Luo, T Y ^a   Brady, D ^a   Shaapur, F ^a   Vishnubhotla, L ^a   Gale, G ^a   Hutf, H R ^a   Jackson, M D ^a   Torres, K ^a   Diebold, A ^a   Guan, J ^a   Gilmer, M C ^a   Brown, G A ^a   Bersuker, G ^a   Zeitzofi P ^a   Tamagawa, T ^b   Guo, X ^c   Wang, X W ^c   Ma, T P ^c  

^a EMATECH Inc   (United States)

^b Jet Process Corp   (United States)

^c Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; FILM PREPARATION; FLUORESCENCE; LEAKAGE CURRENTS; QUANTUM THEORY; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; THERMOOXIDATION; ULTRATHIN FILMS; VAPOR DEPOSITION; VOLTAGE MEASUREMENT;

JET VAPOR DEPOSITION (JVD);

DIELECTRIC FILMS;

EID: 0034505870     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. K.F. Schuegraf, D. Park and C. Hu, lEDMTech. Dig., 609 (1994).
2. Y. Taur and E.J. Nowak, lEDMTech. Dig., 215 (1997).
3. S.-H. Lo, D.A. Buchanan, Y. Taur and W. Wang, IEEE Electron Device Lett. 18,209 (1997).
4. The National Technology Roadmap for Semiconductors, (SIA, Santa Clara, CA, 1997), p.71.
5. C. Parker, G. Lucovsky and J. Hauser, IEEE Electron Device Lett. 19,106 (1998).
6. G. Lucovsky, H. Niimi, Y. Wu, C.R. Parker and J.R. Hauser, J. Vac. Sei. Technol. A16,1721 (1998).
7. S.C. Song, H.F. Luan, Y.Y. Chen, M. Gardner, J. Fulford, M. Alien and D.L. Kwong, IEDM Tech. Dig., 373 (1998).
8. S.C. Song, C.H. Lee, H.F. Luan, D.L. Kwong, M. Gardner, J. Fulford, M. Allen, J. Bloom and R. Evans in Ultrathin SiU2 and High-K Materials for ULSI Gate Dielectrics, edited by H.R. Huff, C.A. Richter, M.L. Green, G. Lucovsky, and T. Hattori
9. (Mat. Res. Soc. Symp. Proc. 567, Warrendale, PA, 1999) pp. 65-70.
10. S.V. Hattangady, D.T. Grider, R. Kraft, W-T. Shiau, M. Douglas, P. Nicollian, M. Rodder, G.A. Brown, A. Chatterjee, J. Hu, S. Aur, H.-L. Tsai, R.A. Chapman, R.H. Eklund, I-CS Chen and M.F. Pas in Microelectronic Device Technology II, SPIE Proceedings Series V. 3506, Bellingham, WA, 1998, p. 30.
11. X.W. Wang, Y. Shi, T.P. Ma, G.J. Cui, T. Tamagawa, J. Golz, B. Halpem and J. Schmitt, 1995 Symp. VLSI Technol. Dig. Tech. Papers. 109(1995).
12. T. P. Ma, IEEE Trans. Electron Dev. 45,680 (1998).
13. X. Guo and T.P. Ma, IEEE Electron Device Lett. 19,207 (1998).
14. S.-H. Lo, D.A. Buchanan and Y. Taur, IBM J. Res. Develop. 43,327 (1999).
15. J.H. Stathis and D.J. DiMaria, IEDM Tech. Dig., 167 (1998).
16. S. Wolf, Silicon Processing for the VLSI Era, Volume 3 - The Submicron MOSFET, 1 ed. (Lattice Press, Sunset Beach, CA, 1995), pp. 196-201.