Semiconductor devices "from inside"

Scanning

Volumn 22, Issue 4, 2000, Pages 227-233

  Mil'shtein, S ^a  

^a University of Massachusetts   (United States)

Author keywords

Differential voltage contrast; Doping profiles; Electrical field profile; Semiconductor devices

Indexed keywords

ARTICLE; DEVICE; ELECTRIC FIELD; ELECTRIC POTENTIAL; IMAGE ENHANCEMENT; IMAGE PROCESSING; PRIORITY JOURNAL; SEMICONDUCTOR;

ELECTRIC POTENTIAL; ELECTRON BEAMS; FERMI LEVEL; IMAGING TECHNIQUES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING;

DIFFERENTIAL VOLTAGE CONTRAST (DVC); QUASI-FERMI ENERGY (QFE); SECONDARY ELECTRON IMAGING;

SEMICONDUCTOR DEVICES;

EID: 0034492797     PISSN: 01610457     EISSN: None     Source Type: Journal    
DOI: 10.1002/sca.4950220401     Document Type: Article

References (19)

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6. Emission failures of a single quantum well laser
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9. Study of Zener diodes by SEM-DVC
10. Electron beam testing of semiconductor devices
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12. Nonequilibrium diagrams of a single quantum well laser
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16. A three-dimensional Monte Carlo system simulating image contrast in surface analytical scanning electron microscopy I - Object-oriented software design and tests