Impact of etching on doping profiles in CZ silicon photo-diodes

Materials Science and Engineering B

Volumn 41, Issue 3, 1996, Pages 386-388

  Mil'shtein, S ^a   Therrien, J ^a  

^a University of Massachusetts   (United States)

Author keywords

Differential voltage contrast; Doping profile; Electron microscopy; Etching; Photodiode; Silicon; Surface morphology

Indexed keywords

DIFFUSION; ELECTRIC VARIABLES MEASUREMENT; ELECTRON MICROSCOPY; ETCHING; MORPHOLOGY; POTASSIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING; SURFACE TREATMENT;

DIFFERENTIAL VOLTAGE CONTRAST; DOPING GRADIENTS; DOPING PROFILE; ETCH PITS; SPIN ON GLASS TECHNOLOGY; SURFACE PROCESSING METHOD;

PHOTODIODES;

EID: 0030407732     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01671-6     Document Type: Letter

References (5)

1. S. Mil'shtein, S. Iatrou, D. Kharas, R. Bell and D. Sandstrom, MRS, 235 (1993) 921.
2. S. Mil'shtein, B. Baker, S. Iatrou and R. Bell, Proc. 1st Int. Symp. Process. Char. Semicond. Mater. Sci. Forum. 174, 1995, p. 325.
3. S. Mil'shtein, D. Kharas, S. Iatrou and K. Gray, Proc. 22nd Int. Conf. Phys. Semicond., 1995, p. 2625.
4. S. Mil'shtein and D. Kharas, Mater. Sci. Eng., B35 (1995) 299-302.
5. S. Mil'shtein, Microelectron. Eng., 31 (1996) 3-12.