Assessment of current and optical confinement in operational quantum well laser

Microelectronic Engineering

Volumn 43-44, Issue , 1998, Pages 539-543

  Mil'shtein, S ^a   Therrien, J M ^a   Thurkins Jr , E J ^a   Chin, A K ^b   Dabkowski, F P ^b  

^a University of Massachusetts   (United States)

^b POLAROID CORPORATION   (United States)

Author keywords

Differential voltage contrasting; Quantum well lasers; Quasi Fermi energy; Scanning electron microscopy

Indexed keywords

EID: 0006315547     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00216-0     Document Type: Article

References (8)

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3. S. Mil'shtein, J. Therrien, Patent Appl. No. 08757468, Nov. 27, 1996.
4. S. Mil'shtein, D. Kharas, J. Therrien, A. Chin, F. Dabkowski, in: Proc. 23rd Int. Conf. Phys. Semicond. (1996), pp. 3199-3202
5. J. Therrien, S. Mil'shtein, A. Chin, in: MRS Thin Films, Structure and Morphology (1996), pp. 749-754.
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7. R. Baets, Solid State Electron. 30 (1987) 1175.
8. J. Singh, Semiconductor Devices, McGraw Hill, 1994, pp. 113-119.