Theoretical study of aluminum chemical vapour deposition using dimethylaluminium hydride: A surface reaction mechanism on Al(111)

Surface Science

Volumn 444, Issue 1, 2000, Pages 99-112

  Nakajima, Tohru ^a   Tanaka, Tatsuo ^a   Yamashita, Koichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM COMPOUNDS; BOND STRENGTH (CHEMICAL); CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; DISSOCIATION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; PHASE INTERFACES; PROBABILITY DENSITY FUNCTION;

DIMETHYLALUMINIUM HYDRIDE;

ALUMINUM;

EID: 0033875258     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00980-2     Document Type: Article

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