Aluminum metallization using a combination of chemical vapor deposition and sputtering

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1028-1035

  Sugai, Kazumi ^a,d   Kishda, Shunji ^a   Shinzawa, Tsutomu ^a   Okabayashi, Hidekazu ^a   Yako, Tadaaki ^b   Kadokura, Hidekimi ^b   Isemura, Masashi ^b   Kobayashi, Tsukasa ^c   Hosokawa, Naokichi ^c  

^a NEC CORPORATION   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

^c Canon ANELVA Technix Corporation   (Japan)

^d ULSI Device Development Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDRIDES; METALLIC FILMS; METALLIZING; MORPHOLOGY; SPUTTER DEPOSITION; THIN FILMS; TITANIUM NITRIDE; ULSI CIRCUITS;

BLANKET CHEMICAL VAPOR DEPOSITION; DIMETHYLALUMINUM HYDRIDE;

ALUMINUM;

EID: 0031098548     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837525     Document Type: Article

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