Very low pressure selective aluminum chemical vapor deposition using dimethylaluminum hydride without H2 carrier gas

Journal of the Electrochemical Society

Volumn 145, Issue 12, 1998, Pages 4327-4332

  Amazawa, Takao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; FILM GROWTH; HYDRIDES; HYDROGEN; INTEGRATED CIRCUIT MANUFACTURE; MORPHOLOGY; PYROLYSIS; SURFACE CHEMISTRY;

VERY LOW PRESSURE SELECTIVE ALUMINUM CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0032300407     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838959     Document Type: Article

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