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Journal of Molecular Structure: THEOCHEM

Volumn 490, Issue 1-3, 1999, Pages 155-166

Ab initio study of aluminum chemical vapor deposition from dimethylaluminum hydride: A gas phase reaction mechanism

(2) Nakajima, T a Yamashita, K a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Chemical vapor deposition; Dimethylaluminum hydride; Large scale integrated

Indexed keywords

EID: 0033231932 PISSN: 01661280 EISSN: None Source Type: Journal
DOI: 10.1016/S0166-1280(99)00096-2 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.