Measurement of the effective sensitive volume of FAMOS cells of an ultraviolet erasable programmable read-only memory

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2428-2434

  Scheick, Leif Z ^b   McNulty, Peter J ^a,c   Roth, David R ^d  

^a IEEE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c CLEMSON UNIVERSITY   (United States)

^d JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE SENSITIVE VOLUME; FLOATING GATE AVALANCHE INJECTED METAL OXIDE SILICON; HOT ELECTRON TRANSPORT;

ELECTRIC FIELDS; ELECTRONS; ESTIMATION; FIELD EFFECT TRANSISTORS; HEAVY IONS; MATHEMATICAL MODELS; PROM; PROTONS; SILICA; ULTRAVIOLET RADIATION;

DOSIMETRY;

EID: 0034451417     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903788     Document Type: Conference Paper

References (32)

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