The effects of space radiation on linear integrated circuits

IEEE Aerospace Conference Proceedings

Volumn 5, Issue , 2000, Pages 363-369

  Johnston, A H ^a   Guertin, S M ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; COMPARATOR CIRCUITS; ELECTRON TRAPS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT TESTING; IONIZATION; PROTONS; RADIATION BELTS; RADIATION DAMAGE; SPACE APPLICATIONS; SPACECRAFT;

CIRCUIT MALFUNCTION; DIGITAL COMPARATOR; ELECTRON-HOLE PAIRS; SPACE RADIATION;

LINEAR INTEGRATED CIRCUITS;

EID: 0034432498     PISSN: 1095323X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

1. Models for total dose degradation of linear integrated circuits
2. Radiation effects at low electric fields in thermal, SIMOX and bipolar base oxides
3. Enhanced damage in bipolar integrated circuits at low dose rate
4. Hardness assurance issues for lateral PNP transistors
5. Proton damage effects in linear integrated circuits
6. Displacement damage in bipolar integrated circuits
7. The influence of VLSI technology evolution on radiation-induced latchup
8. Observation of single event upsets in analog microcircuits
9. Single event effects in analog and mixed-signal integrated circuits
10. Heavy ion and proton induced single event transients in comparators
11. Single event upset sensitivity dependence of linear integrated circuits on bias conditions
12. Proton induced transients in optocouplers: In-flight anomalies, ground irradiation test, mitigation and implications
13. Angular and energy dependence of proton upset in optocouplers