-
1
-
-
0031357734
-
-
Ground Irradiation Test, Mitigation and Implications," IEEE Trans. Nucl. Sei., 44, p.1895, December 1997.
-
K. LaBel, P. W. Marshall, C. J. Marshall M. D'Ordine, M. Carts, G. Lum, H. S. Kim, C. M. Seidlick, T. Powell, R. Abbot, J. Barth and E. Stassinopoulos, "Proton-Induced Transients in Optocouplers: In-Flight Anomalies, Ground Irradiation Test, Mitigation and Implications," IEEE Trans. Nucl. Sei., 44, p.1895, December 1997.
-
P. W. Marshall, C. J. Marshall M. D'Ordine, M. Carts, G. Lum, H. S. Kim, C. M. Seidlick, T. Powell, R. Abbot, J. Barth and E. Stassinopoulos, "Proton-Induced Transients in Optocouplers: In-Flight Anomalies
-
-
Label, K.1
-
2
-
-
0030359989
-
-
IEEE Trans. Nucl. Sei., 43, p. 3167, December 1996.
-
R. G. Rax, C. I. Lee, A. H. Johnston and C. E. Barnes, "Total Dose and Proton Damage in Optocouplers," IEEE Trans. Nucl. Sei., 43, p. 3167, December 1996.
-
C. I. Lee, A. H. Johnston and C. E. Barnes, "Total Dose and Proton Damage in Optocouplers,"
-
-
Rax, R.G.1
-
3
-
-
0027810886
-
-
IEEE Trans. Nucl. Sei., 40, p. 1838, December 1993.
-
R. Koga, S. D. Pinkerton, S. C. Moss, D. C. Mayer, S. LaLumondiere, S. J. Hansel, K. B . Crawford and W. R. Grain,"Observation of Single Event Upsets in Analog Microcircuits," IEEE Trans. Nucl. Sei., 40, p. 1838, December 1993.
-
S. D. Pinkerton, S. C. Moss, D. C. Mayer, S. LaLumondiere, S. J. Hansel, K. B . Crawford and W. R. Grain,"Observation of Single Event Upsets in Analog Microcircuits,"
-
-
Koga, R.1
-
4
-
-
0028709929
-
-
p. 72, 1994 IEEE Radiation Effects Data Workshop.
-
R. Ecoffet, S. Duzerlier, P. Tastet, C. Aicardee and M. Labrunee, "Observation of Heavy Ion Induced Transients in Linear Circuits," p. 72, 1994 IEEE Radiation Effects Data Workshop.
-
S. Duzerlier, P. Tastet, C. Aicardee and M. Labrunee, "Observation of Heavy Ion Induced Transients in Linear Circuits
-
-
Ecoffet, R.1
-
5
-
-
0030349624
-
-
IEEE Trans. Nucl. Sei.,43, p.2960, December 1996.
-
D. K. Nichols, J. R. Coss, T. F. Miyahira and II. R. Schwartz, "Heavy Ion and Proton Induced Single Event Transients in Comparators," IEEE Trans. Nucl. Sei.,43, p.2960, December 1996.
-
J. R. Coss, T. F. Miyahira and II. R. Schwartz, "Heavy Ion and Proton Induced Single Event Transients in Comparators,"
-
-
Nichols, D.K.1
-
6
-
-
0028697670
-
-
IEEE Trans. Nucl. Sei., 4J_, p.2005, December 1994.
-
P.E Dodd, F. W. Sexton and P. S. Winokur, "ThreeDimensional Simulation of Charge Collection and Multiple-Bit Upset in Si Devices," IEEE Trans. Nucl. Sei., 4J_, p.2005, December 1994.
-
F. W. Sexton and P. S. Winokur, "ThreeDimensional Simulation of Charge Collection and Multiple-Bit Upset in Si Devices,"
-
-
Dodd, P.E.1
-
7
-
-
0031354388
-
-
IEEE Trans. Nucl. Sei., 44, P. 2367, December 1997.
-
A. H. Johnston, G. M. Swift and L. D. Edmonds, "Latchup in Integrated Circuits from Energetic Protons," IEEE Trans. Nucl. Sei., 44, P. 2367, December 1997.
-
G. M. Swift and L. D. Edmonds, "Latchup in Integrated Circuits from Energetic Protons,"
-
-
Johnston, A.H.1
-
8
-
-
0030129324
-
-
IEEE Trans. Nucl. Sei., 43, p. 475, April 1996.
-
P. J. McNulty, "Single-Event Effects Experienced by Astronauts and Microelectronic Circuits Flown in Space," IEEE Trans. Nucl. Sei., 43, p. 475, April 1996.
-
"Single-Event Effects Experienced by Astronauts and Microelectronic Circuits Flown in Space,"
-
-
McNulty, P.J.1
-
9
-
-
0020269370
-
-
IEEE Trans. Nucl.. Sei.., 29, p. 2012, December 1982.
-
G. E. Parrel and P. J. McNulty, "Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon," IEEE Trans. Nucl.. Sei.., 29, p. 2012, December 1982.
-
And P. J. McNulty, "Microdosimetric Aspects of Proton-Induced Nuclear Reactions in Thin Layers of Silicon,"
-
-
Parrel, G.E.1
-
12
-
-
0020952139
-
-
IEEE Trans. Nucl. Sei., 30, p. 4493, December 1993.
-
T. R. Oldham and F. B. McLean, "Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon," IEEE Trans. Nucl. Sei., 30, p. 4493, December 1993.
-
And F. B. McLean, "Charge Collection Measurements for Heavy Ions Incident on N- and P-Type Silicon,"
-
-
Oldham, T.R.1
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