Plasma treatment and dry etch characteristics of organic low-k dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 7015-7018

  Wei, Ta Chin ^a   Liu, Chi Hung ^a   Shieh, Jia Ming ^b   Suen, Shich Chang ^b   Dai, Bau Tong ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Dielectric constant; Etch; Helicon wave; Leakage current; Plasma; Selectivity; Spin on

Indexed keywords

DIELECTRIC MATERIALS; DRY ETCHING; FLUOROCARBONS; LEAKAGE CURRENTS; PERMITTIVITY;

HELICON-WAVE HIGH-DENSITY OXYGEN PLASMAS;

PLASMA ETCHING;

EID: 0034430839     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.7015     Document Type: Article

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