The many challenges of oxide etching: Etching deep and narrow holes through oxides requires a careful balance between physical bombardment, chemical etching and chemical passivation

Semiconductor International

Volumn 20, Issue 6, 1997, Pages 109-114

  Singer, Peter ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004400864     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (1)

1. Y. Morand, et al., "Copper integration in a Dual Damascene Architecture for subquarter micron technology," 1997 VMIC.