Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment

Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 501-506

  Mei, Y J ^a   Chang, T C ^b   Chang, S J ^c   Pan, F M ^b   Chen, M S K ^c   Tuan, A ^c   Chou, S ^d   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Air Products Asia   (Taiwan)

^d Air Products San Fu Co Ltd   (Taiwan)

Author keywords

Fluorine dope oxide; Low dielectric; Plasma post treatment

Indexed keywords

AMMONIA; NITROGEN OXIDES; PERMITTIVITY; PLASMA APPLICATIONS; SILICA; THIN FILMS;

MOISTURE RESISTANCE; PLASMA TREATMENT;

DIELECTRIC FILMS;

EID: 0346676687     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00482-3     Document Type: Article

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