Observations of silicon surfaces exposed to inductively coupled CHF3 and C4F8/H2 plasmas using fourier transform infrared ellipsometry

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4522-4526

  Lee, Ho Jun ^a   Motomura, Hideki ^a   Tachibana, Kunihide ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

C4F8 H2; CHF3; Fluorocarbon film deposition; Fluorocarbon plasma; FTIR ellipsometry; Selective SiO2 etching

Indexed keywords

CHEMICAL BONDS; COMPOSITION; DEPOSITION; FLUOROCARBONS; PLASMAS;

SILICON SURFACES;

ELLIPSOMETRY;

EID: 0032131692     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4522     Document Type: Article

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