Critical-dimension controllability of chemically amplified resists for X-ray membrane mask fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 12 B, 2000, Pages 6908-6913

  Ezaki, Mizunori ^a   Nakayama, Yoshinori ^a   Kikuchi, Yukiko ^a   Tsuboi, Shinji ^a   Watanabe, Hiroshi ^a   Aoyama, Hajime ^a   Matsui, Yasuji ^a   Morosawa, Tetsuo ^a   Ohki, Shigehisa ^a   Saito, Kenichi ^a   Matsuda, Tadahito ^a  

^a NTT CORPORATION   (Japan)

Author keywords

100 kV; Chemically amplified resist; Critical dimension; EB mask writer; Post exposure bake; Resist; X ray membrane mask

Indexed keywords

INTEGRATED CIRCUIT LAYOUT; MASKS; PHOTORESISTS; ULSI CIRCUITS; X RAY LITHOGRAPHY;

CHEMICALLY AMPLIFIED RESISTS; CRITICAL DIMENSIONS (CD); ELECTRON BEAM MASK WRITERS;

ELECTRON BEAM LITHOGRAPHY;

EID: 0034427843     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6908     Document Type: Article

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