Low-dose exposure technique for 100-nm-diam hole replication in x-ray lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3504-3508

  Fujii, K ^a   Tanaka, Y ^a   Taguchi, T ^a   Yamabe, M ^a   Suzuki, K ^a   Gomei, Y ^a   Hisatsugu, T ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001701790     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590486     Document Type: Article

References (7)

1. K. Deguchi, K. Miyoshi, M. Oda, T. Matsuda, A. Ozawa, and H. Yoshihara, J. Vac. Sci. Technol. B 14, 4294 (1996).
2. S. Hector, V. Pol, A. Krasnoperova, J. Maldonado, A. Flamholz, D. Heald, C. Stahlhammer, D. Galburt, R. Amodeo, T. Donohue, S. Wind, J. Buchigniano, R. Viswanathan, M. Khan, S. Bollepalli, and F. Cerrina, J. Vac. Sci. Technol. B 15, 2517 (1997).
3. Y. Kikuchi, N. Kihara, S. Sugihara, S. Saitoh, K. Kondo, H. Nomura, and T. Ozaki, J. Vac. Sci. Technol. B 14, 4298 (1996).
4. M. Khan, P. Andersen, and F. Cerrina, Proc. SPIE 1465, 315 (1991).
5. M. Khan, L. Mohammad, J. Xiao, L. Ocola, and F. Cerrina, J. Vac. Sci. Technol. B 12, 3930 (1994).
6. M. Yamabe, Proc. SPIE (to be published).
7. Y. Tanaka, T. Taguchi, K. Fujii, S. Tsuboi, M. Yamabe, K. Suzuki, Y. Gomei, T. Hisatsugu, M. Fukuda, and H. Morita, J. Vac. Sci. Technol. B (to be published).