UVIII-positive chemically amplified resist optimization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 487-495

  Rocque, Janet M ^a   Brooks, Cameron J ^a   Henry, Richard W ^a   Benoit, Douglas E ^a   Mangat, Pawitter J S ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

Chemically amplified resist; Electron beam resist; Etch process; Experimental design; Membrane; Refractory metal; X ray mask

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ETCHING; MASKS; OPTIMIZATION; X RAYS;

POST-EXPOSE BAKE (PEB);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0032403752     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309604     Document Type: Conference Paper

References (6)

1. X-ray mask fabrication advances at the Microlithographic Mask Development Center
2. SNR 200 chemically amplified resist optimization
3. High resolution positive e-beam photoresist developed
4. Temperature uniformity across an x-ray membrane mask during resist baking
5. Performance of IBM's EL-4 E-beam lithography system
6. Characterization of oxynitride hardmask removal processes for refractory x-ray mask fabrication