메뉴 건너뛰기




Volumn 18, Issue 3, 2000, Pages 1572-1575

In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOSPHORUS; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

EID: 0034350486     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591428     Document Type: Article
Times cited : (1)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.