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Volumn 17, Issue 3, 1999, Pages 1155-1157

GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 22644449070     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (11)

References (10)
  • 6
    • 24644503778 scopus 로고    scopus 로고
    • Furuuchi Chemical Corporation, 2-7-12, Ohmorikita, Ohta-ku, Tokyo, Japan
    • Furuuchi Chemical Corporation, 2-7-12, Ohmorikita, Ohta-ku, Tokyo, Japan.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.