An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarization

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 737-739

  Takahashi, M ^a,b   Vaccaro, P ^a,b   Fujita, K ^b   Watanabe, T ^b   Mukaihara, T ^c   Koyama, F ^a,c   Iga, K ^a,c  

^a IEEE

^b ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT POLARIZATION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

DISTRIBUTED BRAGG REFLECTORS; PHOTOLUMINESCENCE MEASUREMENT; REFLECTIVITY SPECTRUM; SUBSTRATE TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPE MEASUREMENT; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030173084     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502078     Document Type: Article

References (8)

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7. Y. Kaneko, S. Nakagawa, T. Takeuchi, D. E. Mars, N. Yamada, and N. Mikoshiba, "InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate," Electron. Lett., vol. 31, no. 10, pp. 805-806, 1995.
8. T. Yamamoto, M. Inai, T. Takebe, and T. Watanabe, "Pregrowth treatment dependence of surface morphology for GaAs grown on exactly oriented (111)A substrates by molecular-beam epitaxy," J. Vac. Sci. Technol. A, vol. 11, no. 3, pp. 631-636, 1993.