High-speed modulation of strain-compensated InGaAs-GaAsP-InGaP multiple-quantum-well lasers

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1133-1135

  Han, H ^a   Freeman, P N ^a   Hobson, W S ^a   Dutta, N K ^a,b   Lopata, J ^a   Wynn, J D ^a   Chu, S N G ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC CURRENTS; ENERGY GAP; HETEROJUNCTIONS; LIGHT MODULATION; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

COMPRESSIVE STRAIN; HIGH SPEED MODULATION; RIDGE WAVEGUIDE; TENSILE STRAIN; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030241434     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531813     Document Type: Article

References (14)

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