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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4515-4517

Super-flat interfaces in pseudomorphic InxGa1-xAs/Al0.28Ga0.72As quantum wells with high in content (x = 0.15) grown on (411)A GaAs substrates by molecular beam epitaxy

(6) Ohashi, Masanobu a Saeki, Tatsuya a Kitada, Takahiro a Shimomura, Satoshi a Okamoto, Yasunori b Hiyamizu, Satoshi a

a OSAKA UNIVERSITY (Japan)

b KUBOTA CORPORATION (Japan)

Author keywords

(411)A GaAs substrates; AlGaAs; Heterointerface; InGaAs; MBE; Photoluminescence; Quantum wells; Strain

Indexed keywords

INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

INTERFACE FLATNESS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032131031 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4515 Document Type: Article

Times cited : (10)

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