Extremely flat interfaces in InxGa1-xAs/Al0.3Ga0.7As quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1786-1788

  Saeki, Tatsuya ^a   Motokawa, Takeharu ^a   Kitada, Takahiro ^a   Shimomura, Satoshi ^a   Adachi, Akira ^b   Okamoto, Yasunori ^c   Sano, Naokatsu ^d   Hiyamizu, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

^c KUBOTA CORPORATION   (Japan)

^d KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

(411)A GaAs substrates; AlGaAs; Heterointerface; InGaAs; MBE; Photoluminescence; Quantum wells; Strain

Indexed keywords

EID: 0001426427     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1786     Document Type: Article

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