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Volumn 113-114, Issue , 1997, Pages 73-78

As 4 pressure dependence of the interface flatness of GaAs/Al 0.3 Ga 0.7 As quantum wells grown on (411) A GaAs substrates by MBE

(7) Shinohara, K a Kasahara, K a Shimomura, S a Adachi, A b Okamoto, Y c Sano, N d Hiyamizu, S a

a OSAKA UNIVERSITY (Japan)

b NISSIN ELECTRIC CO LTD (Japan)

c Res and Headquarters Kubota Ltd (Japan)

d KWANSEI GAKUIN UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SURFACE PROPERTIES;

ALUMINUM GALLIUM ARSENIDE; ARSENIC PRESSURE; INTERFACE FLATNESS; MICROFACETS;

INTERFACES (MATERIALS);

EID: 0031547189 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00863-X Document Type: Article

Times cited : (10)

References (10)

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