Embedded himos® flash memory in 0.35 μm and 0.25 μm cmos technologies

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2153-2160

  Wellekens, Dirk ^a   Van Houdt, Jan ^a  

^a IMEC   (Belgium)

Author keywords

Flash eeprom memory; Source side injection

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRON TUNNELING; EMBEDDED SYSTEMS; GATES (TRANSISTOR); MOS DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES;

CONTROL GATE; FLOATING GATE; FOWLER-NORDHEIM TUNNELING; HIGH INJECTION METAL OXIDE SEMICONDUCTOR; PROGRAM GATE; SOURCE SIDE INJECTION; TRIPLE GATE STRUCTURE; TUNNEL OXIDE THICKNESS;

FLASH MEMORY;

EID: 0034318842     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877178     Document Type: Article

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