Optimization of a source-side-injection FAMOS cell for flash EPROM applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1991-January, Issue , 1991, Pages 315-318

  Liu, David K Y ^a   Kaya, Cetin ^a   Wong, Man ^a   Paterson, Jim ^a   Shah, Pradeep ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Channel hot electron injection; Current measurement; EPROM; Implants; Instruments; Power supplies; Process design; Secondary generated hot electron injection; Tunneling; Voltage

Indexed keywords

CELLS; DENTAL PROSTHESES; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON DEVICES; ELECTRON INJECTION; ELECTRON TUNNELING; ELECTRONS; FLASH MEMORY; HOT ELECTRONS; INSTRUMENTS; PROCESS DESIGN; TRANSPORT PROPERTIES;

CHANNEL HOT ELECTRON INJECTION; CHANNEL HOT ELECTRON PROGRAMMING; DOPANT CONCENTRATIONS; EPROM; LIGHTLY DOPED DRAINS; POWER SUPPLY; PROGRAMMING PERFORMANCE; SOURCE-SIDE INJECTION;

CYTOLOGY;

EID: 84954090926     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1991.235440     Document Type: Conference Paper

References (0)