Analysis of the Enhanced Hot-Electron Injection in Split-Gate Transistors Useful for EEPROM Applications

IEEE Transactions on Electron Devices

Volumn 39, Issue 5, 1992, Pages 1150-1156

  Van Houdt, Jan ^a   Heremans, Paul ^a   Deferm, Ludo ^a   Groeseneken, Guido ^a   Maes, Herman E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - PROM; ELECTRONS - TRANSPORT PROPERTIES; INTEGRATED CIRCUITS, CMOS - FABRICATION;

EEPROM; FLASH MEMORY; HOT ELECTRON INJECTION; SPLIT GATE TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0026866734     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.129096     Document Type: Article

References (16)

1. H. E. Maes, J. Witters, and G. Groeseneken, “Trends in non-volatile memory devices and technologies,” in Proc. ESSDERC (Bologna, Italy), 1987, p. 743.
2. A. T. Wu, T. Y. Chan, P. K. Ko, and C. Hu, “A novel high-speed, 5-volt programming EPROM structure with source-side injection,” in IEDM Tech. Dig., 1986, p. 584.
3. R. Kazerounian, S. Ali, Y. Ma, and B. Eitan, “A 5 volt high density poly-poly erase flash EPROM cell,” in IEDM Tech. Dig., 1988, p. 436.
4. K. R. Hofmann, C. Werner, W. Weber, and G. Dorda, “Hot-electron and hole-emission effects in short n-channel MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, p. 691, 1985.
5. K. Naruke, S. Yamada, E. Obi, S. Taguchi, and M. Wada, “A new flash-erase EEPROM cell with a sidewall select-gate on its source side,” in IEDM Tech. Dig., 1989, p. 603.
6. M. Kamiya, Y. Kojima, Y. Kato, K. Tanaka, and Y. Hayashi, “EPROM cell with high gate injection efficiency,” in IEDM Tech. Dig., 1982, p. 741.
7. J. Van Houdt, D. Wellekens, G. Groeseneken, L. Deferm, and H. E. Maes, “The high injection MOS cell: A novel 5V-only flash EEPROM concept with a 1 μ s programming time,” in Proc. ESSDERC, 1991, p. 617.
8. F. Hofmann and W. Krautschneider, “MOSFET interface state densities of different technologies,” in Proc. IEEE Int. Conf. on Microelectronic Test Structures, vol. 2, 1989, p. 109.
9. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. De Keersmaecker, “A reliable approach to charge-pumping measurements in MOS transistors,” IEEE Trans. Electron Devices, vol. ED-31, p. 42, 1984.
10. P. Heremans, J. Witters, G. Groeseneken, and H. E. Maes, “Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation,” IEEE Trans. Electron Devices, vol. 36, p. 1318, 1989.
11. C. Hu, S. C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, and K. W. Terrill, “Hot-electron-induced MOSFET degradation—Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, p. 375, 1985.
12. P. Heremans, H. E. Maes, and N. Saks, “Evaluation of hot carrier degradation of n-channel MOSFET's with the charge pumping technique,” IEEE Electron Device Lett., vol. EDL-7, p. 428, 1986.
13. P. Heremans, R. Bellens, G. Groeseneken, and H. E. Maes, “Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFET’s,” IEEE Trans. Electron Devices, vol. 35, p. 2194, 1988.
14. S. P. Edwards, K. De Meyer, and Ph. De Wilde, “Adaptive meshing applied to a two-dimensional device simulator,” in Fundamental Research on the Numerical Modelling of Semiconductor Devices and Processes, J. J. H. Miller, Ed. Dublin, Ireland: Boole Press, 1986, p. 65.
15. N. S. Saks, P. L. Heremans, L. Van Den Hove, H. E. Maes, R. F. De Keersmaecker, and G. J. Declerck, “Observation of hot-hole injection in nMOS transistors using a modified floating-gate technique,” IEEE Trans. Electron Devices, vol. ED-33, p. 1529, 1986.
16. B. Eitan and D. Frohman-Bentchkowsky, “Hot electron injection into the oxide in n-channel MOS devices,” IEEE Trans. Electron Devices, vol. ED-28, p. 328, 1981.