Tetrahedral-shaped recess (lll)a facet channel algaas/ingaas heteroj unction field-effect transistor with an ingaas floating quantum dot gate

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2054-2060

  Shima, Masashi ^a   Sakuma, Yoshiki ^a   Futatsugi, Toshiro ^a   Awano, Yuji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Fets; Gaas(lll)b; Heterojunctions; Memories; Quantum dots; Rtss (random telegraph signals); Tsr (tetrahedral shaped recess)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HETEROJUNCTIONS; HYSTERESIS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR STORAGE; SUBSTRATES;

CURRENT MODULATION; FLOATING QUANTUM DOT GATE; RANDOM TELEGRAPH SIGNALS; TETRAHEDRAL SHAPED RECESS;

FIELD EFFECT TRANSISTORS;

EID: 0034318448     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877166     Document Type: Article

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