Discrete resistance switching in submicrometer silicon inversion layers: Individual interface traps and low-frequency (1f?) noise

Physical Review Letters

Volumn 52, Issue 3, 1984, Pages 228-231

  Ralls, K S ^a,b   Skocpol, W J ^a   Jackel, L D ^a   Howard, R E ^a   Fetter, L A ^a   Epworth, R W ^a   Tennant, D M ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35949025938     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.52.228     Document Type: Article

References (21)

1. 1/f noise in n-channel silicon-gate MOS transistors
2. Sixth International Conference on Noise in Physical Systems
3. Transient capacitance spectroscopy of semiconductor/insulator interface states: Thermally activated capture cross section of Si/SiO2 interface states
4. A model of interface states and charges at the Si-SiO2 interface: Its predictions and comparison with experiments
5. The effects of oxide traps on the MOS capacitance
6. Insulating Films on Semiconductors—1979