SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 267-275

Plasma enhanced chemical vapor deposition and characterization of fluorine doped silicon dioxide films

(3) Yoo, Woo Sik a Swope, Richard a Mordo, David a

a NOVELLUS SYSTEMS INC (United States)

Author keywords

Fluorine doping; Gap fill; Intermetal dielectric; PECVD; Response surface; TEOS

Indexed keywords

INTERMETAL DIELECTRIC; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TETRAETHYLORTHOSILICATE;

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; FLUORINE; PRESSURE EFFECTS; SILICA; SILICON WAFERS; THERMAL EFFECTS;

DIELECTRIC FILMS;

EID: 0030650455 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.36.267 Document Type: Article

Times cited : (24)

References (13)

1
- 0001852669
- T. Fukada and T. Akahori: Ext. Abstr. 1993 Int. Conf. Solid State Devices and Materials (1993) p. 158.
- (1993) Ext. Abstr. 1993 Int. Conf. Solid State Devices and Materials , pp. 158
- Fukada, T.¹ Akahori, T.²

2
- 4043078839
- D. Carl, D. Mordo, B. Sparks, M. Logan and J. Ritter: Proc. 1st Int. VMIC Specialty Conf. Dielectrics for ULSI Multilevel Interconnection (DUMIC) (1995) p. 234.
- (1995) Proc. 1st Int. VMIC Specialty Conf. Dielectrics for ULSI Multilevel Interconnection (DUMIC) , pp. 234
- Carl, D.¹ Mordo, D.² Sparks, B.³ Logan, M.⁴ Ritter, J.⁵

3
- 0343126280
- Y. Nishimoto, N. Tokumatsu, T. Fukuya and K. Maeda: Ext. Abstr. 19th Int. Conf. Solid State Devices and Materials (1987) p. 447.
- (1987) Ext. Abstr. 19th Int. Conf. Solid State Devices and Materials , pp. 447
- Nishimoto, Y.¹ Tokumatsu, N.² Fukuya, T.³ Maeda, K.⁴

4
- 84975391827
- M. Hatanaka, Y. Mizushima, O. Hataishi and Y. Furumura: Proc. VLSI Multilevel Interconnection Conf. (1991) p. 435.
- (1991) Proc. VLSI Multilevel Interconnection Conf. , pp. 435
- Hatanaka, M.¹ Mizushima, Y.² Hataishi, O.³ Furumura, Y.⁴

5
- 84975376019
- C. S. Pai, J. F. Miner and P. D. Foo: Proc. VLSI Multilevel Interconnection Conf. (1991) p. 442.
- (1991) Proc. VLSI Multilevel Interconnection Conf. , pp. 442
- Pai, C.S.¹ Miner, J.F.² Foo, P.D.³

6
- 0346156338
- T. Usami, K. Shimokawa and M. Yoshimaru: Jpn. J. Appl. Phys. 33 (1994) 408.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 408
- Usami, T.¹ Shimokawa, K.² Yoshimaru, M.³

7
- 0343544110
- T. Usami, K. Shimokawa and M. Yoshimaru: Ext. Abstr. Conf. Solid State Devices and Materials (1993) p. 161.
- (1993) Ext. Abstr. Conf. Solid State Devices and Materials , pp. 161
- Usami, T.¹ Shimokawa, K.² Yoshimaru, M.³

8
- 3342876009
- D. Carl, S. Schuchmann, M. Kilgore, R. Swope and W. van den Hoek: Proc. 12th Int. VLSI Multilevel Interconnection Conf. (VMIC) (1995) p. 97.
- (1995) Proc. 12th Int. VLSI Multilevel Interconnection Conf. (VMIC) , pp. 97
- Carl, D.¹ Schuchmann, S.² Kilgore, M.³ Swope, R.⁴ Van Den Hoek, W.⁵

9
- 0030108340
- W. S. Yoo and R. Swope: Jpn. J. Appl. Phys. 35 (1996) L273.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Yoo, W.S.¹ Swope, R.²

10
- 1542601585
- R. Swope and W. S. Yoo: J. Vac. Sci. Tech. B 14 (1996) 1702.
- (1996) J. Vac. Sci. Tech. B , vol.14 , pp. 1702
- Swope, R.¹ Yoo, W.S.²

11
- 0041523454
- N. Hayasaka, H. Nishiyama, H. Miyajima, K. Tomioka, R. Nakata and H. Okano: Proc. 1993 Dry Process Symp. (1993) 163.
- (1993) Proc. 1993 Dry Process Symp. , pp. 163
- Hayasaka, N.¹ Nishiyama, H.² Miyajima, H.³ Tomioka, K.⁴ Nakata, R.⁵ Okano, H.⁶

12
- 3342936833
- R. Swope and W. S. Yoo: Jpn. J. Appl. Phys. 35 (1996).
- (1996) Jpn. J. Appl. Phys. , vol.35
- Swope, R.¹ Yoo, W.S.²

13
- 3342991880
- B. van Schravendijk, A. S. Harrus, G. Delgado, B. Sparks and C. Roberts: Proc. 9th IEEE VLSI Multilevel Interconnection Conf. (1992) p. 140.
- (1992) Proc. 9th IEEE VLSI Multilevel Interconnection Conf. , pp. 140
- Van Schravendijk, B.¹ Harrus, A.S.² Delgado, G.³ Sparks, B.⁴ Roberts, C.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.