Structural and electrical properties for fluorine-doped silicon oxide films prepared by biased helicon-plasma chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1627-1630

  Tamura, Takahiro ^a   Sakai, Junro ^a   Satoh, Makoto ^a   Inoue, Yoichi ^a   Yoshitaka, Hikaru ^a  

^a Canon ANELVA Technix Corporation   (Japan)

Author keywords

Biased helicon plasma CVD; Dielectric constant; F Si F bond; Fluorine doped silicon oxide; I V characteristics; Near neighbor Si F bond

Indexed keywords

EID: 0005103597     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1627     Document Type: Article

References (19)

1. N. Hayasaka, Y. Nishiyama, H. Miyajama, K. Tomioka, R. Nakata and H. Okano: Proc. 15th Dry Process Symp. (The Institute of Electrical Engineers Japan, Tokyo, 1993) p. 163.
2. T. Homma, R. Yamaguchi and Y. Murao: J. Electrochem. Soc. 140 (1993) 687.
3. M. Muroyama, Y. Haga and M. Sasaki: Ext. Abstr. 56th Autumn Meet. of the Japan Society of Applied Physics Kanazawa, August (1995) 26a-ZB-4.
4. T. Tamura, Y. Inoue, M. Satoh, H. Yoshitaka and J. Sakai: Proc. 1st Int. Dielectrics for VLSI/ULSI Multilevel Interconnection Conf. (1995) p. 227.
5. T. Suehiro, T. Akahori, S. Ozaki, T. Tani and S. Nakayama: Ext. Abstr. 35th Spring Meet. of the Japan Society of Applied Physics, Tokyo, March (1988) 30p-V-13.
6. R. Katsumata, H. Miyajima, Y. Nakasaki and N. Hayasaka: Proc. 17th Dry Process Symp. (The Institute of Electrical Engineers Japan, Tokyo, 1995) p. 269.
7. C. J. Brinker, D. R. Tallant, E. P. Roth and C. S. Ashley: J. Non-Cryst. Solids 82 (1985) 117.
8. C. A. M. Mulder, R. K. Jansen, P. Bachmann and D. Leers: J. Non-Cryst. Solids 72 (1985) 243.
9. S. Okuda, T. Ishida and Y. Shioya: Ext. Abstr. 56th Autumn Meet, of the Japan Society of Applied Physics, Kanazawa, August (1995) 26a-ZB-9.
10. S. Koizumi, K. Shimokawa and M. Yoshimaru: Tech. Rep. IEICE, SDM95-180 (1995-12) 41.
11. K. Iwagami, M. Yoshikawa, N. Morita and H. Ishida: Ext. Abstr. 57th Autumn Meet. of the Japan Society of Applied Physics, Fukuoka, September (1996) 9a-H-10.
12. H. Kawazoe: NEW GLASS 3 (1989) No. 3, 11.
13. K. Ema, Y. Hibino, H. Shigekawa and S. Hyodo: Jpn. J. Appl. Phys. 26 (1987) 649.
14. J. Nishizawa and Y. Tarui: Chou LSI Sougou Jiten (ULSI Encyclopedia) (Science Forum, Tokyo, 1988) p. 418 [in Japanese].
15. H. Kudo, N. Awaji, R. Shinohara, S. Takeishi, M. Hoshino and M. Yamada: Ext. Abstr. 56th Autumn Meet. of the Japan Society of Applied Physics, Kanazawa, August (1995) 26a-ZB-10.
16. D. J. DiMaria, R. Ghez and D. W. Dong: J. Appl. Phys. 51 (1980) 4830.
17. F. J. Feigl, D. R. Young, D. J. DiMaria, S. Lai and J. Calise: J. Appl. Phys. 52 (1981) 5665.
18. J. Bate and E. Tierney: J. Appl. Phys. 60 (1986) 3136.
19. T. Tamura, Y. Inoue, M. Satoh, H. Yoshitaka and J. Sakai: Jpn. J. Appl. Phys. 35 (1996) 2526.