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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 6135-6141

The effect of hydrogen addition on the fluorine doping level of SiOF films prepared by remote plasma-enhanced chemical vapor deposition using SiF4-based plasmas

(3) Pankov, Vladimir a Alonso, Juan Carlos a Ortiz, Armando a

a UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO (Mexico)

Author keywords

Fluorinated silicon dioxide film; Interlayer dielectric; Remote plasma enhanced chemical vapor deposition; RPECVD; SiF4; Silicon tetrafluoride; SiOF

Indexed keywords

CHEMICAL BONDS; DOPING (ADDITIVES); FILM GROWTH; FILM PREPARATION; FLUORINE; HALOGENATION; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICA; SURFACE CHEMISTRY; SURFACE PROPERTIES;

INTERLAYER DIELECTRICS; SILICON TETRAFLUORIDE;

DIELECTRIC FILMS;

EID: 0032205036 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.6135 Document Type: Article

Times cited : (14)

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