Characterization of the Si/SiO2 interface formed by remote plasma enhanced chemical vapor deposition from SiH4/N2O with or without chlorine addition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2660-2666

  Park, Young Bae ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000701913     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589001     Document Type: Article

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