Effects of native oxide removal from silicon substrate and annealing on SiO2 films deposited at 120 °C by plasma enhanced chemical vapor deposition using disilane and nitrous oxide

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 2, 1996, Pages 727-731

  Song, Juho ^a   Ajmera, P K ^a   Lee, G S ^a  

^a LOUISIANA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343880690     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588705     Document Type: Article

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