Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 6, 1998, Pages 3157-3163

  Okimura, Kunio ^a   Maeda, Naohiro ^a  

^a FUKUI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032348060     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581514     Document Type: Article

References (11)

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