Comparative study of radiation- and stress-induced leakage currents in thin gate oxides

Semiconductor Science and Technology

Volumn 15, Issue 10, 2000, Pages 961-964

  Ang, C H ^a   Ling, C H ^a   Cheng, Z Y ^a   Kim, S J ^a   Cho, B J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; OXIDES; RADIATION; SEMICONDUCTING FILMS; STRESS ANALYSIS; THIN FILMS; X RAY ANALYSIS;

GATE OXIDES; RADIATION-INDUCED LEAKAGE CURRENTS (RILC); STRESS-INDUCED LEAKAGE CURRENTS (SILC);

GATES (TRANSISTOR);

EID: 0034301434     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/10/305     Document Type: Article

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