Defect analysis of silicon detectors made of different materials for radiation hardness

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 114-119

  Dezillie, B ^a   Eremin, V ^b   Li, Z ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS;

FLOAT-ZONE DETECTORS; SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0032637932     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01477-6     Document Type: Article

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