High-frequency characterization of sub-0.25-μm fully depleted silicon-on-insulator MOSFETs

IEEE Electron Device Letters

Volumn 21, Issue 10, 2000, Pages 497-499

  Chen, C L ^a   Mathews, R H ^a   Burns, J A ^a   Wyatt, P W ^a   Yost, D R ^a   Chen, C K ^a   Fritze, M ^a   Knecht, J M ^a   Suntharalingam, V ^a   Soares, A ^a   Keast, C L ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT LAYOUT; SILICON ON INSULATOR TECHNOLOGY;

FULLY-DEPLETED SILICON-ON-INSULATORS (FDSOI); HIGH-FREQUENCY EQUIVALENT CIRCUITS; MICROWAVE FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0034298211     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.870613     Document Type: Article

References (11)

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