Kinetics of tip-induced island growth on Si(111) with a scanning tunneling microscope

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2339-2343

  Shklyaev, Alexander A ^a,b   Shibata, Motoshi ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; REACTION KINETICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH;

FIELD-DIPOLE INTERACTIONS; FIELD-INDUCED EVAPORATIONS; SCANNING REFLECTION ELECTRON MICROSCOPES (SREM);

SEMICONDUCTING SILICON;

EID: 0034264876     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1308598     Document Type: Article

References (25)

1. H. Uchida, D. Huang, F. Grey, and M. Aono, Phys. Rev. Lett. 70, 2040 (1993).
2. C. T. Salling and M. G. Lagally, Science 265, 502 (1994).
3. I.-W. Lyo and Ph. Avouris, Science 253, 173 (1991).
4. D. M. Eigler, C. P. Lutz, and W. E. Rudge, Nature (London) 352, 600 (1991).
5. A. Kobayashi, F. Grey, R. S. Williams, and M. Aono, Science 259, 1724 (1993).
6. Z. L. Ma, N. Liu, W. B. Zhao, Q. J. Gu, X. Ge, Z. Q. Xue, and S. J. Pang, J. Vac. Sci. Technol. B 13, 1212 (1995).
7. S. Heike, T. Hashizume, and Y. Wada, J. Appl. Phys. 80, 4182 (1996).
8. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Appl. Phys. Lett. 74, 2140 (1999).
9. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Surf. Sci. 447, 149 (2000).
10. L. J. Whitman, J. A. Stroscio, R. A. Dragoset, and R. J. Celotta, Science 251, 1206 (1991).
11. I. Lyubinetsky, S. Mezhenny, W. J. Choyke, and J. T. Yates, Jr., J. Vac. Sci. Technol. A 17, 1445 (1999).
12. T. T. Tong and G. Kellogg, Phys. Rev. B 12, 1343 (1975).
13. S. C. Wang and T. T. Tsong, Phys. Rev. B 26, 6470 (1982).
14. D. Heskett, T. M. Wong, A. J. Smith, W. R. Graham, N. J. DiNardo, and E. W. Plummer, J. Vac. Sci. Technol. B 7, 915 (1989).
15. S. Maruno, H. Nakahara, S. Fujita, H. Watanabe, Y. Kusumi, and M. Ichikawa, Rev. Sci. Instrum. 68, 116 (1997).
16. D. M. Eigler and E. K. Schweizer, Nature (London) 344, 524 (1990).
17. Ph. Avouris, Acc. Chem. Res. 28, 95 (1995).
18. D. Kandel and E. Kaxiras, Phys. Rev. Lett. 76, 1114 (1996).
19. E. S. Fu, D.-J. Liu, M. D. Johnson, J. D. Weeks, and E. D. Williams, Surf. Sci. 385, 259 (1997).
20. A. A. Shklyaev, M. Shibata, and M. Ichikawa, J. Appl. Phys. 88, 1397 (2000).
21. G. Binning and H. Rohrer, Surf. Sci. 126, 236 (1983).
22. A. A. Shklyaev, M. Shibata, and M. Ichikawa, J. Appl. Phys. (submitted).
23. T. M. H. Wong, S. J. O'Shea, A. W. McKinnon, and M. E. Welland, Appl. Phys. Lett. 67, 786 (1995).
24. D. Samara, J. R. Williamson, C. K. Shin, and S. K. Banerjee, J. Vac. Sci. Technol. B 14, 1344 (1996).
25. H. Rauscher, F. Behrendt, and R. J. Behm, J. Vac. Sci. Technol. B 15, 1373 (1997).