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Nuclear Inst. and Methods in Physics Research, A

Volumn 360, Issue 1-2, 1995, Pages 445-454

Investigation on the long-term radiation hardness of low and medium resistivity starting silicon materials for RT silicon detectors in high energy physics

(1) Li, Zheng a

a BROOKHAVEN NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 30244558292 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/0168-9002(94)01729-8 Document Type: Article

Times cited : (21)

References (10)

1
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- (1992) Nucl. Instr. and Meth. A , vol.315 , pp. 149
- Wunstorf¹ Benkert² Claussen³ Croitoru⁴ Fretwurst⁵ Lindstrom⁶ Schulz⁷

2
- 0001088332
- (1992) Nucl. Instr. and Meth. A , vol.322 , pp. 177
- Gill¹ Hall² Roe³ Sotthibandhu⁴ Wheadon⁵ Giubellino⁶ Ramello⁷

3
- 84914904860
- H.J. Ziock, et al., Temperature dependence of radiation damage and its annealing in silicon detectors, to be published in IEEE Trans. Nucl. Sci.

4
- 0028397410
- (1994) Nucl. Instr. and Meth. A , vol.342 , pp. 105
- Li¹

5
- 0028400372
- (1994) Nucl. Instr. and Meths. A , vol.342 , pp. 119
- Fretwurst¹

6
- 84914919599
- Experimental comparisons among various models for the reverse annealing of the effective concentration of ionized space charges of neutron irradiated silicon detectors
- BNL-60274, Virginia, IEEE Tran. Nucl. Sci., to be published in
- (1994) presented at the IEEE Nucl. Sci. Symp. Norfolk
- Li¹

7
- 33747806887
- Resistivity measurements on the neutron irradiate detector grade silicon materials
- BNL-49822, Florence Italy, Italian Physical Society Conf. Proc.
- (1993) 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors , vol.46
- Li¹

8
- 0040978124
- A Baldini, E Focardi, SIF, Bologna
- (1994) Large Scale Applications and Radiation Hardness of Semiconductor Detectors , pp. 101
- Li¹

9
- 0027555051
- (1993) Nucl. Instr. and Meths. A , vol.326 , pp. 350
- Kraner¹ Li² Fretwurst³

10
- 0027649007
- Investigation of the type inversion phenomena: resistivity and carrier mobility in the space charge region and electrical neutral bulk in neutron irradiated silicon p/sup +/-n junction detectors
- (1992) IEEE Transactions on Nuclear Science , vol.40 NS , Issue.4 , pp. 367
- Li¹ Eremin² Strokan³ Verbitskaya⁴

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