Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs

Journal of Applied Physics

Volumn 81, Issue 8 PART 2B, 1997, Pages 4865-4867

  Hayashi, T ^a   Tanaka, M ^a,b   Nishinaga, T ^a   Shimada, H ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETISM; FILM GROWTH; HALL EFFECT; LOW TEMPERATURE OPERATIONS; MAGNETIC HYSTERESIS; MAGNETIC PROPERTIES; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

ELECTRON PROBE MICROANALYZER; MAGNETIZATION MEASUREMENT; MAGNETOTRANSPORT PROPERTIES;

MAGNETIC SEMICONDUCTORS;

EID: 0031122729     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364859     Document Type: Article

References (11)

1. Semiconductors and Semimetals, edited by J. K. Furdyna and J. Kossut (Academic, New York, 1988), Vol. 25.
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4. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada, in Proceedings of the Spring Meeting of the Japan Society of Applied Physics, 1996, p. 1307; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, and Y. Otuka, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, August 1996; J. Cryst. Growth (in press).
5. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada, in Proceedings of the Spring Meeting of the Japan Society of Applied Physics, 1996, p. 1307; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, and Y. Otuka, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, August 1996; J. Cryst. Growth (in press).
6. T. Hayashi, M. Tanaka, T. Nishinaga, and H. Shimada, in Proceedings of the Spring Meeting of the Japan Society of Applied Physics, 1996, p. 1307; T. Hayashi, M. Tanaka, T. Nishinaga, H. Shimada, H. Tsuchiya, and Y. Otuka, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, August 1996; J. Cryst. Growth (in press).
7. We also notice that other groups have recently been studying GaMnAs. For example, F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, and Y. Sugawara, in Proceedings of the Spring Meeting of JSAP, 1996, p. 1308; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and H. Iye, Appl. Phys. Lett. 69, 363 (1996); Y. Nishikawa and J. Yoshino, in Proceedings of the 15th Electrical Materials Symposium, IzuNagaoka, 1996, p. 295; J. De Boeck, A. Van Esch, and G. Borghs, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, 1996; J. Cryst. Growth (to be published).
8. We also notice that other groups have recently been studying GaMnAs. For example, F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, and Y. Sugawara, in Proceedings of the Spring Meeting of JSAP, 1996, p. 1308; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and H. Iye, Appl. Phys. Lett. 69, 363 (1996); Y. Nishikawa and J. Yoshino, in Proceedings of the 15th Electrical Materials Symposium, IzuNagaoka, 1996, p. 295; J. De Boeck, A. Van Esch, and G. Borghs, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, 1996; J. Cryst. Growth (to be published).
9. We also notice that other groups have recently been studying GaMnAs. For example, F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, and Y. Sugawara, in Proceedings of the Spring Meeting of JSAP, 1996, p. 1308; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and H. Iye, Appl. Phys. Lett. 69, 363 (1996); Y. Nishikawa and J. Yoshino, in Proceedings of the 15th Electrical Materials Symposium, IzuNagaoka, 1996, p. 295; J. De Boeck, A. Van Esch, and G. Borghs, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, 1996; J. Cryst. Growth (to be published).
10. We also notice that other groups have recently been studying GaMnAs. For example, F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, and Y. Sugawara, in Proceedings of the Spring Meeting of JSAP, 1996, p. 1308; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and H. Iye, Appl. Phys. Lett. 69, 363 (1996); Y. Nishikawa and J. Yoshino, in Proceedings of the 15th Electrical Materials Symposium, IzuNagaoka, 1996, p. 295; J. De Boeck, A. Van Esch, and G. Borghs, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, 1996; J. Cryst. Growth (to be published).
11. We also notice that other groups have recently been studying GaMnAs. For example, F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano, and Y. Sugawara, in Proceedings of the Spring Meeting of JSAP, 1996, p. 1308; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and H. Iye, Appl. Phys. Lett. 69, 363 (1996); Y. Nishikawa and J. Yoshino, in Proceedings of the 15th Electrical Materials Symposium, IzuNagaoka, 1996, p. 295; J. De Boeck, A. Van Esch, and G. Borghs, in Proceedings of the 9th International Conference on Molecular Beam Epitaxy, Malibu, CA, 1996; J. Cryst. Growth (to be published).