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Volumn 39, Issue 7 B, 2000, Pages 4285-4288

First-principle calculation of migration processes of as during growth on GaAs(001)

Author keywords

As adsorption; First principle calculations; GaAs(001); Kinetic Monte Carlo simulation; Migration; 2(4 2) surface

Indexed keywords

ANISOTROPY; ARSENIC; COMPUTER SIMULATION; DENSITY (SPECIFIC GRAVITY); MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SCANNING TUNNELING MICROSCOPY;

DENSITY FUNCTIONAL THEORY (DFT); FIRST-PRINCIPLES CALCULATIONS; MIGRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034226472 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4285 Document Type: Article

Times cited : (13)

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