Energetics and diffusion paths of gallium and arsenic adatoms on flat and stepped GaAs(001) surfaces

Surface Science

Volumn 425, Issue 1, 1999, Pages 31-47

  Salmi, M A ^a   Alatalo, M ^b   Ala Nissila, T ^a,b,c   Nieminen, R M ^a  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

^c BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; DIFFUSION IN SOLIDS; GALLIUM; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; OPTIMIZATION; POTENTIAL ENERGY; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE ROUGHNESS;

LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE KINETICS; SURFACE RECONSTRUCTION; SURFACE RELAXATION; TERSOFF POTENTIAL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033537788     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00180-6     Document Type: Article

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