Influence of buffer layers on the In-content of GaInN layers

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 286-290

  Off, J ^a   Kniest, A ^a   Vorbeck, C ^a   Scholz, F ^a   Ambacher, O ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Buffer layer; GaInN; Indium content; MOVPE; XRD

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; X RAY CRYSTALLOGRAPHY;

BUFFER LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032477141     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00639-3     Document Type: Article

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