Effects of ion energy distribution on topography dependent charging

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 188-189

  Kinoshita, Takashi ^a   Ma, Shawning ^a   Hane, Masami ^a   McVittie, James P ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CALCULATIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRONS; IONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PLASMA DENSITY; PLASMA OSCILLATIONS; PLASMA SHEATHS; TEMPERATURE;

CHARGING VOLTAGE; ELECTRON TEMPERATURE; ION ENERGY DISTRIBUTION FUNCTION; ION TRAJECTORIES; MONTE CARLO SHEATH SIMULATOR; POISSON EQUATION; TOPOGRAPHY DEPENDENT CHARGING;

PLASMA SIMULATION;

EID: 0029723263     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)