Suppression of topography-dependent charging damage to MOS devices using pulse-time-modulated plasma

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1998, Pages 176-179

  Noguchi, K ^a   Ohtake, H ^a   Samukawa, S ^a   Horiuchi, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; THRESHOLD VOLTAGE;

PULSE-TIME-MODULATED PLASMA; TOPOGRAPHY-DEPENDENT CHARGING DAMAGE;

MOSFET DEVICES;

EID: 0032279334     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)