|
|
|
Volumn , Issue , 1999, Pages 125-126
|
|
New radical injection method for high-performance and chargeless dielectric etching
a
a
NEC CORPORATION
(Japan)
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
ARGON;
BOND STRENGTH (CHEMICAL);
DISSOCIATION;
ETCHING;
FLOW OF FLUIDS;
FLUOROCARBONS;
FREQUENCIES;
IONS;
PLASMA APPLICATIONS;
POLYMERIZATION;
PRESSURE EFFECTS;
SILICA;
CHARGE TO BREAKDOWN CURRENT;
CHARGELESS DIELECTRIC ETCHING;
CONTACT HOLE FORMATION;
ELECTRON ENERGY DISTRIBUTION FUNCTIONS;
ELECTRON TEMPERATURE;
ETCHING SELECTIVITY;
PERFLUOROCARBON GASES;
SELECTIVE RADICAL GENERATION;
ULTRAHIGH FREQUENCY PLASMA;
INTEGRATED CIRCUIT MANUFACTURE;
|
|
EID: 0033280505
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
|
Times cited : (1)
|
|
References (1)
|
