메뉴 건너뛰기




Volumn 147, Issue 3, 2000, Pages 217-221

Investigation of rare earth gettering for the fabrication of improved mid-infrared LEDs

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GETTERS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL RESOLVING POWER; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

EID: 0034204975     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20000503     Document Type: Article
Times cited : (15)

References (24)
  • 16
    • 0021138229 scopus 로고    scopus 로고
    • VLASENKO, L.S., GATSOEV, K.A., GORELENOK, A.T., KAMANIN, A.V, MAMUTIN, W, PUSHNYI, B.V., TIBILOV, VK., TOLPAROV, Y.P., and SHUBIN, A.E.: 'Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films', pp. 49-50 '
    • BAGRAEV, N.T., VLASENKO, L.S., GATSOEV, K.A., GORELENOK, A.T., KAMANIN, A.V, MAMUTIN, W, PUSHNYI, B.V., TIBILOV, VK., TOLPAROV, Y.P., and SHUBIN, A.E.: 'Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films', Soviet Physics Semiconductors-USSR, 1984, 18, (1), pp. 49-50 '
    • Soviet Physics Semiconductors-USSR, 1984, 18, (1)
    • Bagraev, N.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.