Excitonic photoluminescence in high-purity InAs MBE epilayers on GaAs substrates

Semiconductor Science and Technology

Volumn 8, Issue 12, 1993, Pages 2135-2142

  Tang, P J P ^a   Phillips, C C ^a   Stradling, R A ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BOUND EXCITONS; DONOR ACCEPTOR PAIR TRANSITION; FREE EXCITONIC RECOMBINATION; LATTICE MISMATCH; SEMICONDUCTING INDIUM ARSENIDE;

BAND STRUCTURE; ELECTRON TRANSITIONS; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0027808338     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/12/017     Document Type: Article

References (29)